general features v ds = 100v,i d =57a r ds(on) < 16m ? @ v gs =10v (typ:12m ? ) special process technology for high esd capability high density cell design for ultra low rdson fully characterized avalanche voltage and current good stability and uniformity with high e as excellent package for good heat dissipation application power switching application hard switched and high frequency circuits uninterruptible power supply absolute maximum ratings (t c =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v drain current-continuous i d 57 a drain current-continuous(t c =100 ) i d (100 ) 40 a pulsed drain current i dm 190 a maximum power dissipation p d 170 w derating factor 1.13 w/ MSN1057K 100v(d-s) n-channel enhancement mode power mos fet schematic diagram marking and pin assignment to-220-3l top view lead free pin configuration more semiconductor company limited http://www.moresemi.com 1/6 package marking and ordering information device marking device device package reel size tape width quantity to-220-3l - - - MSN1057K MSN1057K
single pulse avalanche energy (note 5) e as 580 mj operating junction and st orage temperature range t j ,t stg -55 to 175 thermal characteristic thermal resistance,junction-to-case (note 2) r jc 0.88 /w electrical characteristics (t c =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 100 110 - v zero gate voltage drain current i dss v ds =100v,v gs =0v - - 1 a gate-body leakage current i gss v gs =20v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 2 3 4 v drain-source on-state resistance r ds(on) v gs =10v, i d =28a - 12 16 m ? forward transconductance g fs v ds =25v,i d =28a 32 - - s dynamic characteristics (note4) input capacitance c lss - 4400 - pf output capacitance c oss - 320 - pf reverse transfer capacitance c rss v ds =25v,v gs =0v, f=1.0mhz - 240 - pf switching characteristics (note 4) turn-on delay time t d(on) - 12 - ns turn-on rise time t r - 55 - ns turn-off delay time t d(off) - 45 - ns turn-off fall time t f v dd =50v,i d =28a v gs =10v,r gen =2.5 ? - 47 - ns total gate charge q g - 95 - nc gate-source charge q gs - 18 - nc gate-drain charge q gd v ds =80v,i d =28a, v gs =10v - 25 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =28a - 0.85 1.2 v diode forward current (note 2) i s - - 57 a reverse recovery time t rr - 36 - ns reverse recovery charge qrr tj = 25c, if = 28a di/dt = 100a/ s (note3) - 56 - nc forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production 5. eas condition tj=25 ,v dd =50v,v g =10v,l=0.5mh,rg=25 ? MSN1057K more semiconductor company limited http://www.moresemi.com 2/6
test circuit 1 e as test circuit 2 gate charge test circuit 3 switch time test circuit MSN1057K more semiconductor company limited http://www.moresemi.com 3/6
typical electrical and the rmal characteristics (curves) vds drain-source voltage (v) figure 1 output characteristics vgs gate-source voltage (v) figure 2 transfer characteristics i d - drain current (a) figure 3 rdson- drain current t j -junction temperature( ) figure 4 rdson-junctiontemperature qg gate charge (nc) figure 5 gate charge vsd source-drain voltage (v) figure 6 source- drain diode forward rdson on-resistance(m ) i d - drain current (a) i d - drain current (a) normalized on-resistance vgs gate-source voltage (v) i s - reverse drain current (a) MSN1057K more semiconductor company limited http://www.moresemi.com 4/6
vds drain-source voltage (v) figure 7 capacitance vs vds vds drain-source voltage (v) figure 8 safe operation area t j -junction temperature( ) figure 9 bv dss vs junction temperature t j -junction temperature( ) figure 10 v gs(th) vs junction temperature i d - drain current (a) c capacitance (pf) square wave pluse duration(sec) figure 11 normalized maximum transient thermal impedance r(t),normalized effective transient thermal im p edance MSN1057K more semiconductor company limited http://www.moresemi.com 5/6
to-220-3l package information dimensions in millimeters dimensions in inches symbol min. max. min. max. a 4.400 4.600 0.173 0.181 a1 2.250 2.550 0.089 0.100 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.330 0.650 0.013 0.026 c1 1.200 1.400 0.047 0.055 d 9.910 10.250 0.390 0.404 e 8.9500 9.750 0.352 0.384 e1 12.650 12.950 0.498 0.510 e 2.540 typ. 0.100 typ. e1 4.980 5.180 0.196 0.204 f 2.650 2.950 0.104 0.116 h 7.900 8.100 0.311 0.319 h 0.000 0.300 0.000 0.012 l 12.900 13.400 0.508 0.528 l1 2.850 3.250 0.112 0.128 v 7.500 ref. 0.295 ref. 3.400 3.800 0.134 0.150 MSN1057K more semiconductor company limited http://www.moresemi.com 6/6
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